BAW56T

High-speed double diode

DESCRIPTION Twohigh-speedswitchingdiodesinacommonanodeconfiguration,fabricatedinplanartechnology,inaverysmallrectangularSMDSOT416(SC-75)package. FEATURES •VerysmallplasticSMDpackage •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.75V •Repetiti

BAW56T

Silicon Switching Diode

SiliconSwitchingDiode •Forhigh-speedswitchingapplications •Commonanodeconfiguration •BAW56S/U:Fororientationinreelseepackageinformationbelow •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BAW56T

Surface Mount Switching Diodes

SurfaceMountSwitchingDiodes Features: *Ultra-SmallSurfaceMountPackage *FastswitchingSpeed *ForGeneralPurposeSwitchingApplications *HighConductance

BAW56T

Plastic-Encapsulated Diodes

SOT-523Plastic-EncapsulatedDiodes SWITCHINGDIODE FEATURES Powerdissipation PD:150mW(Tamb=25℃) ForwardCurrent IF:75mA ReverseVoltage VR:85V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

BAW56T

Switching Diode

SwitchingDiode

BAW56T

SILICON EPITAXIAL TYPE DIODE

ULTRAHIGHSPEEDSWITCHINGAPPLICATION. FEATURES •SmallPackage:ESM. •LowForwardVoltage:VF=0.92V(Typ.). •FastReverseRecoveryTime:trr=1.6ns(Typ.). •SmallTotalCapacitance:CT=2.2pF(Typ.).

BAW56T

PN Junction Guard Ring for Transient and ESD Protection

Features: •LowForwardVoltageDrop •FastSwitching •PNJunctionGuardRingforTransientandESDProtection

BAW56T

SWITCHING DIODE

FEATURES Powerdissipation PD:150mW(Tamb=25℃) ForwardCurrent IF:75mA ReverseVoltage VR:85V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

BAW56T

Marking：JD；Package：SOT-523；Surface Mount Fast Switching Diode

FEATURES •Ultra-Smallsurfacemountpackage. •Fastswitchingspeed. •Forgeneralpurposeswitchingappilications. •Highconductance. APPLICATIONS •Generalpurposeswitchingapplication.

BAW56T

Switching Diode

SwitchingDiode Features FastSwitchingSpeed ForGeneralPurposeSwitchingApplications HighConductance — — —