Silicon Switching Diode

Silicon Switching Diode • For high-speed switching applications • Common anode configuration • BAW56S / U: For orientation in reel see package information below • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：128.41 Kbytes 页数：8 Pages

INFINEON

英飞凌

High-speed switching diodes

General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance: Cd ≤ 2 pF ■ Low leakage current ■ Reverse voltage: VR ≤ 90 V ■ Small SMD plastic packages Applications ■ Hig

文件：115.47 Kbytes 页数：15 Pages

恩XP

High-speed switching diodes

General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance: Cd ≤ 2 pF ■ Low leakage current ■ Reverse voltage: VR ≤ 90 V ■ Small SMD plastic packages Applications ■ Hig

文件：115.47 Kbytes 页数：15 Pages

恩XP

High-Speed Double Diode Array

Features ● Small plastic SMD package ● High switching speed: max. 4 ns ● Continuous reverse voltage:max. 75 V ● Repetitive peak reverse voltage:max. 85 V ● Repetitive peak forward current:max. 450 mA.

文件：41.98 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon Switching Diode Array (For high-speed switching applications Common anode)

Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal (galvanic) isolated Diodes in one package

文件：43.41 Kbytes 页数：4 Pages

SIEMENS

西门子

High-speed double diode array

DESCRIPTION The BAW56S consists of two dual high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the small SMD SOT363 plastic package. FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V

文件：74.54 Kbytes 页数：12 Pages

PHI

PHI

丝印：A1；Package：TSSOP6；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance: Cd ≤ 2 pF • Low leakage current • Reverse voltage: VR ≤ 90 V • Very

文件：213.24 Kbytes 页数：11 Pages

NEXPERIA

安世

Silicon Switching Diode

文件：153.55 Kbytes 页数：12 Pages

INFINEON

英飞凌

丝印：A1；Package：TSSOP6；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance: Cd ≤ 2 pF • Low leakage current • Reverse voltage: VR ≤ 90 V • Very

文件：213.56 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：A2；Package：DFN1412-6；Quad high-speed switching diodes

1. General description Quad high-speed switching diodes with common anode configurations encapsulated in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low leakage current • Reverse volt

文件：258.45 Kbytes 页数：11 Pages

NEXPERIA

安世