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型号	下载订购	功能描述	制造商上传企业	LOGO
BAV756DW	文件：378.78 Kbytes Page：3 Pages	Silicon Epitaxial Planar Switching Diode Features • High speed • High switching speed 文件：378.78 Kbytes 页数：3 Pages	YFWDIODE 佑风微	YFWDIODE
BAV756DW_08	文件：126.86 Kbytes Page：3 Pages	QUAD SURFACE MOUNT SWITCHING DIODE ARRAY Features • Fast Switching Speed • Ultra-Small Surface Mount Package • For General Purpose Switching Applications • High Conductance • One BAV70 Circuit and One BAW56 Circuit In One Package • Easily Connected As Full Wave Bridge • Lead Free/RoHS Compliant (Note 3) • Green Device (Notes 4 an 文件：126.86 Kbytes 页数：3 Pages	DIODES 美台半导体	DIODES
BAV756DW-7-F	文件：126.86 Kbytes Page：3 Pages	QUAD SURFACE MOUNT SWITCHING DIODE ARRAY Features • Fast Switching Speed • Ultra-Small Surface Mount Package • For General Purpose Switching Applications • High Conductance • One BAV70 Circuit and One BAW56 Circuit In One Package • Easily Connected As Full Wave Bridge • Lead Free/RoHS Compliant (Note 3) • Green Device (Notes 4 an 文件：126.86 Kbytes 页数：3 Pages	DIODES 美台半导体	DIODES
BAV756DW-HF	文件：470.26 Kbytes Page：4 Pages	丝印：KCA；Package：SOT-363；SMD Switching Diodes Features - For general purpose switching application. - Fast switching speed. - Easily connected as full wave bridge. - High conductance. 文件：470.26 Kbytes 页数：4 Pages	COMCHIP 典琦	COMCHIP
BAV756DW-T1	文件：99.48 Kbytes Page：4 Pages	SURFACE MOUNT FAST SWITCHING DIODE ARRAY Quad Diode Common Cathode and Anode Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0 文件：99.48 Kbytes 页数：4 Pages	WTE Won-Top Electronics	WTE
BAV756S	文件：212.33 Kbytes Page：9 Pages	丝印：A7；Package：TSSOP6；High-speed switching diode 1. General description High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance: Cd ≤ 2 pF • Low leakage current • Reverse voltage: VR ≤ 90 V • Very 文件：212.33 Kbytes 页数：9 Pages	NEXPERIA 安世	NEXPERIA
BAV756S	文件：115.47 Kbytes Page：15 Pages	High-speed switching diodes General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance: Cd ≤ 2 pF ■ Low leakage current ■ Reverse voltage: VR ≤ 90 V ■ Small SMD plastic packages Applications ■ Hig 文件：115.47 Kbytes 页数：15 Pages	恩XP	恩XP
BAV756S	文件：115.47 Kbytes Page：15 Pages	High-speed switching diodes General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance: Cd ≤ 2 pF ■ Low leakage current ■ Reverse voltage: VR ≤ 90 V ■ Small SMD plastic packages Applications ■ Hig 文件：115.47 Kbytes 页数：15 Pages	恩XP	恩XP
BAV756S	文件：73.08 Kbytes Page：12 Pages	High-speed switching diode array DESCRIPTION The BAV756S consists of four high-speed switching diodes fabricated in planar technology, and encapsulated in the small SMD SOT363 plastic package. One pair of diodes has a common cathode; the other pair has a common anode. FEATURES • Small plastic SMD package • High switching spee 文件：73.08 Kbytes 页数：12 Pages	PHI 飞利浦	PHI
BAV756S-Q	文件：213.74 Kbytes Page：9 Pages	丝印：A7；Package：TSSOP6；High-speed switching diode 1. General description High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance: Cd ≤ 2 pF • Low leakage current • Reverse voltage: VR ≤ 90 V • Very 文件：213.74 Kbytes 页数：9 Pages	NEXPERIA 安世	NEXPERIA

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技术参数

Compliance (Only Automotive supports PPAP)：
Standard
Configuration：
Quad
Polarity：
Anode
Power Rating (mW)：
200 mW
N)：
No Y/N
Peak RepetitiveReverse VoltageVRRM (V)：
75 V
Reverse Recovery Time trr (ns)：
4 ns
Maximum Average Rectifier Current IO (mA)：
150 mA
Maximum Peak Forward Surge Current IFSM (A)：
2 A
Forward Voltage Drop VF @ IF (mA)：
1 mA
Maximum ReverseCurrent IR (µA)：
2.5 µA
Maximum Reverse Current IR @ VR (V)：
75 V
V(BR)R (V) Min (µA)：
75@2.5μA
TotalCapacitance CT (pF)：
2 pF
VF(V) Max @ IF=1.0mA：
0.7
VF(V) Max @ IF=10mA：
0.82
VF(V) Max @ IF=100mA：
1.2
IR(nA) Max @ VR=5V：
10
IR(µA) Max @ VR=30V：
0.1
IR(uA) Max @ VR=80V：
2.5μA@75V
Packages：
SOT363

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	BAV756	恩XP	25+	SOT-23	26828	NXP/恩智浦全新特价BAV756即刻询购立享优惠#长期有货	询价
深圳市赛美科科技有限公司	BAV756	HITACHI		SOT-363	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市勤思达科技有限公司	BAV756DW-7-F	DIODES	1215+	SOT363	150000	全新原装,绝对正品,公司大量现货供应.	询价
深圳市弘为电子有限公司	BAV756S	PHI	24+	SOT-363	3000	原装现货假一罚十	询价
深圳市一线半导体有限公司	BAV756S,115	恩XP	24+		9000		询价
深圳市卓越微芯电子有限公司	BAV756DWSOT-363	长电	25+	SOT-363	105000	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市豪迈兴电子有限公司	BAV756S115	恩XP	24+	N/A	21322	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市恒创达实业有限公司	BAV756S.115	恩XP	17+	SOT-363	6200	100%原装正品现货	询价
深圳市达恩科技有限公司	BAV756DW-7-F	DiodesZetex	24+	NA	3000	进口原装正品优势供应	询价
深圳市正迈科技有限公司	BAV756S	恩XP	23+	NA	10658	专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品	询价

更多BAV75供应商更新时间2025-10-31 14:14:00

技术参数

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