首页 >BAV103,115>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NPN-Silizium-FototransistorSiliconNPNPhototransistor Features ●Especiallysuitableforapplicationsfrom420nmto1130nm ●Highlinearity ●TO-18,baseplate,transparentepoxyresinlens,withbaseconnection Applications ●Computer-controlledflashes ●Photointerrupters ●Industrialelectronics ●Forcontrolanddrive | SIEMENS Siemens Ltd | SIEMENS | ||
NPN-Silizium-Fototransistor | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | OSRAM | ||
NPN-Silizium-FototransistorNEU:NPN-Silizium-FototransistormitTageslichtsperrfilter | SIEMENS Siemens Ltd | SIEMENS | ||
.NPN-Silizium-FototransistorSiliconNPNPhototransistor Features ●Especiallysuitableforapplicationsfrom420nmto1130nm(SFH300)andof880nm(SFH300FA) ●Highlinearity ●5mmLEDplasticpackage ●Availableingroups Applications ●Computer-controlledflashes ●Photointerrupters ●Industrialelectronics ●For | SIEMENS Siemens Ltd | SIEMENS | ||
.NPN-Silizium-FototransistorSiliconNPNPhototransistor Features ●Especiallysuitableforapplicationsfrom420nmto1130nm(SFH300)andof880nm(SFH300FA) ●Highlinearity ●5mmLEDplasticpackage ●Availableingroups Applications ●Computer-controlledflashes ●Photointerrupters ●Industrialelectronics ●For | SIEMENS Siemens Ltd | SIEMENS | ||
SILICONMINIATURETHYRISTOR SiliconMiniatureThyristor | SIEMENS Siemens Ltd | SIEMENS | ||
SiliconBi-directionalTriggerDevice GENERALDESCRIPTION Siliconbidirectionaltriggerdeviceinaglassenvelopesuitableforsurfacemounting.Thedeviceisintendedforuseintriacandthyristortriggercircuits. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
SILICONPLANARTHYRISTOR | DIGITRON Digitron Semiconductors | DIGITRON | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
SiliconBi-directionalTriggerDevice GENERALDESCRIPTION Siliconbidirectionaltriggerdeviceinaglassenvelopesuitableforsurfacemounting.Thedeviceisintendedforuseintriacandthyristortriggercircuits. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelenhancementmodeMOStransistor DESCRIPTION N-channelenhancementmodeMOStransistorinaSOT23SMDpackage. FEATURES •Verylowthreshold •High-speedswitching •Nosecondarybreakdown •DirectinterfacetoC-MOS,TTLetc. APPLICATIONS •Powermanagement •DCtoDCconverters •Batterypoweredapplications •‘Glue- | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channelenhancementmodeMOStransistor FEATURES ·Verylowthreshold ·High-speedswitching ·Nosecondarybreakdown ·DirectinterfacetoC-MOS,TTLetc. APPLICATIONS ·Powermanagement ·DCtoDCconverters ·Batterypoweredapplications ·‘Glue-logic’;interfacebetweenlogicblocksand/or periphery ·Generalpurposeswit | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
30V,N-channelTrenchMOSFET 1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23Surface-Mounted Device(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETtechnology •ElectroStaticDis | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
DC/DCConverters | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
BipolarJunctionTransistor FEATURES ●Highvoltagecapability ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、ElectronicBallast、 ChargerandSwitch-modepowersupplies | JINGDAOShenzhen Jingdao Electronic Co.,Ltd 晶道深圳市晶道电子有限公司 | JINGDAO | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·ContinuousCollectorCurrent-IC=1A ·CollectorPowerDissipation- :PC=30W@TC=25℃ APPLICATIONS ·DesignedforTVverticalapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconPNPPowerTransistor DESCRIPTION •ContinuousCollectorCurrent-lc=1A •CollectorPowerDissipation- :Pc=30W@TC=25°C APPLICATIONS •DesignedforTVverticalapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
BipolarJunctionTransistor FEATURES ●Highvoltagecapability ●Intergratedantiparallelcollector-emitterdiode ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、ElectronicBallast、 andSwitch-modepowersupplies | JINGDAOShenzhen Jingdao Electronic Co.,Ltd 晶道深圳市晶道电子有限公司 | JINGDAO | ||
BipolarJunctionTransistor FEATURES ●Highvoltagecapability ●Intergratedantiparallelcollector-emitterdiode ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、ElectronicBallast、 andSwitch-modepowersupplies | JINGDAOShenzhen Jingdao Electronic Co.,Ltd 晶道深圳市晶道电子有限公司 | JINGDAO |
产品属性
- 产品编号：
BAV103,115
- 制造商：
Nexperia USA Inc.
- 类别：
分立半导体产品 > 二极管 - 整流器 - 单
- 包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
- 二极管类型：
标准
- 电流 - 平均整流 (Io)：
250mA
- 速度：
快速恢复 =< 500ns，> 200mA（Io）
- 不同 Vr、F 时电容：
5pF @ 0V，1MHz
- 安装类型：
表面贴装型
- 封装/外壳：
DO-213AC，MINI-MELF，SOD-80
- 供应商器件封装：
LLDS；MiniMelf
- 工作温度 - 结：
175°C（最大）
- 描述：
DIODE GEN PURP 200V 250MA LLDS
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
安世(Nexperia) |
23+ |
SOD80C |
12500 |
进口原装假一赔十可开增值票 |
询价 | ||
NXP Semiconductors |
2122 |
NA |
5000 |
自营现货,只做正品 |
询价 | ||
NEXPERIA |
23+ |
Tube |
75000 |
郑重承诺只做原装进口现货 |
询价 | ||
NXP |
547500 |
询价 | |||||
DISCRETE |
2500 |
PH3 |
135000 |
询价 | |||
NXP/恩智浦 |
新年份 |
LL34 |
3500 |
绝对全新原装现货,欢迎来电查询 |
询价 | ||
NXP |
20+ |
LL34 |
65300 |
一级代理/放心购买! |
询价 | ||
MICREL/麦瑞 |
23+ |
SOT23-5 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
NEXPERIA/安世 |
23+ |
SOD-80C-2 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
NXP/恩智浦 |
1910+ |
LL34 |
5000 |
代理渠道全新正品原假一罚十 |
询价 |
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