Silicon Bi-directional Trigger Device

GENERAL DESCRIPTION Silicon bidirectional trigger device in a glass envelope suitable for surface mounting. The device is intended for use in triac and thyristor trigger circuits.

文件：14.99 Kbytes 页数：3 Pages

PHI

飞利浦

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package. FEATURES • Very low threshold • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. APPLICATIONS • Power management • DC to DC converters • Battery powered applications • ‘Glue-

文件：96.52 Kbytes 页数：12 Pages

PHI

飞利浦

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：1.85593 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel enhancement mode MOS transistor

FEATURES · Very low threshold · High-speed switching · No secondary breakdown · Direct interface to C-MOS, TTL etc. APPLICATIONS · Power management · DC to DC converters · Battery powered applications · ‘Glue-logic’; interface between logic blocks and/or periphery · General purpose swit

文件：197.85 Kbytes 页数：13 Pages

NEXPERIA

安世