Small Signal Diodes

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) ​​​​​​​• Moisture Sensitivity Level 1 • Silicon Epitaxial Planar Diodes • These diodes are also available in other case styles including: the DO-35 case with the type desi

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MCC

Ultrafast silicon rectifier diodes

Forward Current: 0,2 A Reverse Voltage: 50 to 300 V Features ● Max. solder temperature: 260°C ● Plastic material has UL classification 94V-0 ● One green ring denotes cathode and ultrafast switching device ● The type numbers are noted only on the lable on the reel

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SEMIKRON

赛米控丹佛斯

500mW Hermetically Sealed Glass High Voltage Switching Diodes

Features ●— High Voltage Switching Device —● Mini Melf package —● Surface device type mounting —● Hermetically sealed glass —● Compression bonded construction —● All external surface are corrosion resistant and leads are readily solderable —● RoHS compliant —● Matte Tin (Sn

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TSC

台湾半导体

SMALL SIGNAL SWITCHING DIODE

VOLTAGE RANGE: 50-200 V CURRENT: 250 mA FEATURES ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation MECHANICAL DATA ◇ Case: MINI-MELF,glass case ◇ Polarity: Color band denotes cathode ◇ Weight: Approx 0.031 grams

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BILIN

银河微电

Single general-purpose switching diodes

General description Single general-purpose switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. Features ● High switching speed: trr ≤ 50 ns ● Low leakage current ● Low capacitance: Cd

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恩XP

SILICON EPITAXIAL PLANAR DIODES

SILICON EPITAXIAL PLANAR DIODES High Voltage General Purpose Diodes

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SEMTECH_ELEC

先之科半导体

HIGH SPEED SWITCHING DIODES

FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max. 625 mA. • Pb / RoH

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SYNSEMI

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

VOLTAGE 120 to 250 Volts POWER 300 mWatts FEATURES • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • In compliance with EU RoHS 2002/95/EC directives

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PANJIT

強茂

SWITCHING DIODE

Features · Fast Switching Speed · Surface Mount Package Ideally Suited for Automatic Insertion · For General Purpose Switching Applications High Conductance

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DAESAN

Small Signal Diodes

FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, and the SOT-23 case with the

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GE