首页 >BAT86113整流器件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
100VN-ChannelMOSFET Features ShieldedGateMOSFETTechnology HBMESDprotectionlevel>6kVtypical(Note4) HighperformancetrenchtechnologyforextremelylowRDS(on) Highpowerandcurrenthandlingcapabilityinawidelyused surfacemountpackage VDS=100V ID(atVGS=10V)4.2A RDS(ON)(atVGS=10V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
N-ChannelShieldedGatePowerTrench짰MOSFET100V,5.5A,104m廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-channelEnhancementModePowerMOSFET Features VDS=100V,ID=18.1A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
100VN-ChannelMOSFET Features ShieldedGateMOSFETTechnology HBMESDprotectionlevel>6kVtypical(Note4) HighperformancetrenchtechnologyforextremelylowRDS(on) Highpowerandcurrenthandlingcapabilityinawidelyused surfacemountpackage VDS=100V ID(atVGS=10V)4.2A RDS(ON)(atVGS=10V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=5.5A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=104mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelPowerTrench짰MOSFET100V,3.3A,100m | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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