丝印：L9；Package：SOT23；40 V, 200 mA Schottky barrier dual diode

1. General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • Qualified according to AEC-Q101 and

文件：192.6 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 200 mA Schottky barrier dual diode

Nexperia

安世

40 V, 200 mA Schottky barrier diode

1. General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • Qualified according to AEC-Q101 and recom

文件：191.07 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

文件：48.29 Kbytes 页数：8 Pages

PHI

飞利浦

SCHOTTKY BARRIER (DOUBLE) DIODES

FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package • Ultra high-speed switching • Voltage clamping • Protection circuits • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. .

文件：102.64 Kbytes 页数：3 Pages

PANJIT

強茂