首页 >BAT720WT-TP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
iscSiliconPNPPowerTransistor DESCRIPTION ·DCCurrentGain-:hFE=40@IC=-0.5A ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=-60V(Min) ·ComplementtotypeBD719 APPLICATIONS ·Designedforuseinaudiooutputandgeneralpurposeamplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconPNPPowerTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SurfacemountSi-EpitaxialPlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation–1.5W •PlasticcaseSOT-223 •Weightapprox.–0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | Diotec Diotec Semiconductor | Diotec | ||
NPNSiliconHigh-VoltageTransistors(SuitableforvideooutputstagesinTVsetsandswitchingpowersuppliesHighbreakdownvoltage) ●SuitableforvideooutputstagesinTVsetsandswitchingpowersupplies ●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Lowcapacitance ●Complementarytypes:BF721/723(PNP) | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
NPNSILICONPLANARHIGHVOLTAGETRANSISTOR FEATURES *Highbreakdownandlowsaturationvoltages APPLICATIONS *SuitableforvideooutputstagesinTVsets *Switchingpowersupplies | Zetex Zetex Semiconductors | Zetex | ||
NPNhigh-voltagetransistors DESCRIPTION NPNtransistorsinaSOT223plasticpackage. PNPcomplement:BF723. FEATURES •Lowfeedbackcapacitance. APPLICATIONS •Class-Bvideooutputstagesofcolourtelevisionreceivers •Generalpurposehighvoltagecircuits. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNhigh-voltagetransistors FEATURES •Lowfeedbackcapacitance. APPLICATIONS •Class-Bvideooutputstagesofcolourtelevision receivers •Generalpurposehighvoltagecircuits. DESCRIPTION NPNtransistorsinaSOT223plasticpackage. PNPcomplement:BF723. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
CHeterojunctionWidebandRFBipolarTransistor ProductBrief TheBFP720isaverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=25mA.Thed | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
LowNoiseSiliconGermaniumBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
RobustHighPerformanceLowNoiseBipolarRFTransistor ProductBrief TheBFP720ESDisaSiliconGermaniumCarbon(SiGe:C)NPNHeterojunctionwidebandBipolarRFTransistor(HBT)inaplasticdualemitterstandardpackagewithvisibleleads.Thedeviceisfittedwithinternalprotectioncircuits,whichenhancerobustnessagainstESDandhighRFinput | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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