丝印：AT160S；Package：SC-73；Schottky barrier double diode

1. General description Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plasti

文件：196.93 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：AT160S；Package：SC-73；Schottky barrier double diode

1. General description Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plasti

文件：196.49 Kbytes 页数：8 Pages

NEXPERIA

安世

Silicon Schottky Diode (Low-power Schottky rectifier diode Miniature plastic package for surface mounting SMD)

Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting (SMD)

文件：23.91 Kbytes 页数：3 Pages

SIEMENS

西门子

Silicon Schottky Diode

• Low barrier diode for detectors up to GHz frequencies • Pb-free (RoHS compliant) package

文件：392.63 Kbytes 页数：4 Pages

INFINEON

英飞凌

EiceDRIVER™ enhanced 1EDI302xAS/1EDI303xAS evaluation board

The EiceDRIVER™ enhanced 1EDI302xAS/1EDI303xAS evaluation board is a versatile evaluation platform for the EiceDRIVER™ enhanced 1EDI302xAS/1EDI303xAS family. It features a half bridge configuration, see Figure 1. There is the option to mount either the HybridPACK™ DSC IGBT module or a discrete P

文件：9.99749 Mbytes 页数：27 Pages

INFINEON

英飞凌

Single-channel isolated gate driver IC with adjustable DESAT and soft-off

Features • 600 V, 650 V, 900 V, and 1200 V IGBTs, SiC and Si MOSFETs • 40 V absolute maximum output supply voltage • ±3 A, ±6 A, and ±9 A typical sinking and sourcing peak output current • Separate source and sink outputs for hard switching and with active Miller clamp/clamp driver • Adjustme

文件：2.30184 Mbytes 页数：20 Pages

INFINEON

英飞凌

丝印：2G；Package：SOD323；40 V, 0.75 A medium power Schottky barrier rectifier

1. General description Medium power Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: IF ≤ 0.75 A • Reverse voltage: VR ≤ 40 V

文件：226.38 Kbytes 页数：10 Pages

NEXPERIA

安世

40 V, 0.75 A medium power Schottky barrier rectifier

1. General description Medium power Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: IF ≤ 0.75 A • Reverse voltage: VR ≤ 40 V

文件：226.38 Kbytes 页数：10 Pages

NEXPERIA

安世

SCHOTTKY BARRIER DIODE

Features • Medium current schottky rectifier diode Applications • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications

文件：223.35 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

Schottky barrier diode

DESCRIPTION Planar Schottky barrier diode in a small SOT23 plastic SMD package. FEATURES • Low forward voltage • Small SMD package • Low capacitance. APPLICATIONS • UHF mixer • Sampling circuits • Modulators • Phase detection.

文件：173.14 Kbytes 页数：7 Pages

恩XP