首页 >BAS70-05T-TP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SWITCHINGDIODE | RECTRON Rectron Semiconductor | RECTRON | ||
SmallSignalSchottkyDiodes,Single&Dual Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SmallSignalSchottkyDiodes,Single&Dual | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SmallSignalSchottkyDiodes,Single&Dual | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SurfaceMountSwitchingDiode | FUTUREWAFER FutureWafer Tech Co.,Ltd | FUTUREWAFER | ||
General-purposedualSchottkydiode 1.Generaldescription General-purposedualSchottkydiodeinasmallSOT323(SC-70)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance 3.Applications •Ultrahigh-speedswitch | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
SiliconSchottkyDiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SurfaceMountSchottkyBarrierDiodes FEATURES •LowTurn-onvoltage •LowForwardVoltage-0.75V(Max)@IF=10mA •VeryLowCapacitance-LessThan2.0pF@0V Forhighspeedswitchingapplication,circuitprotection | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
Schottkybarrier(double)diodes Features •Lowforwardvoltage •Highbreakdownvoltage •Guardringprotected •VerysmallSMDpackage •Lowcapacitance. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
SiliconSchottkyDiode SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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