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BAS70-04-G

SmallSignalSchottkyDiodes

FEATURES •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualifiedavailable(partnumberonrequest) •BaseP/N-G3-green,commercialgrade •

VishayVishay Siliconix

威世科技威世科技半导体

BAS70-04-HF

SmallSignalSchottkyDiodes

Features -MoldingcompoundmeetsUL94V-0 flammabilityrating. -Lowforwardvoltage.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

BAS70-04L

SchottkyBarrierDiode

TheseSchottkybarrierdiodesaredesignedforhighspeedswitching applications,circuitprotection,andvoltageclamping.Extremelylow forwardvoltagereducesconductionloss.Miniaturesurfacemount packageisexcellentforhandheldandportableapplicationswhere spaceislimited. Featu

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS70-04L

SchottkyBarrierDiode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS70-04Q

SmallSignalSchottkyDiode

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

BAS70-04-Q

General-purposedualSchottkydiode

1.Generaldescription General-purposedualSchottkydiodeinasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q101andreco

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS70-04S

SiliconSchottkyDiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BAS70-04S

SiliconSchottkyDiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BAS70-04S

SiliconSchottkyDiodeArray(General-purposediodeforhigh-speedswitchingCircuitprotectionVoltageclamping)

SiliconSchottkyDiodeArray •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BAS70-04S

SiliconSchottkyDiode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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