Small Signal Schottky Diode

FEATURES • This diode features very low turn-on voltage and fast switching • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • AEC-Q101 qualified available • Space saving SOD-523 package • Base P/N-G3 - RoHS-compliant, commer

文件：75.93 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世

Schottky Diode in SOD-523

Features • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. • Space saving SOD-523 package • Lead (Pb)-free component • Component in accordance to RoHS 2002/

文件：53.3 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世

Schottky Diode in SOD-523

Features • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. • Space saving SOD-523 package • Lead (Pb)-free component • Component in accordance to RoHS 2002/

文件：53.3 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世

Small Signal Schottky Diode

FEATURES • This diode features very low turn-on voltage and fast switching • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Space saving SOD-523 package • Material categorization: for definitions of compliance please see www.v

文件：55.45 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世

SCHOTTKY DIODES 120mA, 40V

DESCRIPTION 120mA Planar Schottky barrier diodes with an integrated guard ring for stress protection. Single diodes and double diodes with different pinning are available. The BAS40 is available in SOT 23 p a ckage FEATURES ⚫ Low Turn-on Voltage ⚫ Fast Switching ⚫ Low forward current

文件：249.21 Kbytes 页数：5 Pages

AITSEMI

创瑞科技

丝印：45；200mA Surface Mount Small Signal Diodes

■ Features • Low current rectification and high speed switching. • Small surface mount type. • Up to 200mA current capability. • Low forward voltage drop (VF = 1.00V typ. @40mA). • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, ex.BAS40G. • Le

文件：167.82 Kbytes 页数：3 Pages

CITC

竹懋科技

SCHOTTKY DIODE

FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Forward Current IF: 200 m A Reverse Voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：66.17 Kbytes 页数：1 Pages

TEL

东电电子

Plastic-Encapsulate Diodes

Plastic-Encapsulate Diodes FEATURES • Low Forward Voltage • Fast Switching

文件：255.45 Kbytes 页数：2 Pages

HOTTECH

合科泰

丝印：44；Package：SOT23；General-purpose dual Schottky diode

1. General description General-purpose dual Schottky diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance • AEC-Q101 qualified 3. Applications •

文件：190.41 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Surface Mount Schottky Barrier Diode

Features ◇ Low turn-on voltage ◇ Fast switching ◇ PN junction guard Ring for transient

文件：143.19 Kbytes 页数：2 Pages

LUGUANG

鲁光电子