iMOTION™ Modular Application Design Kit

EVAL-M3-102T is an evaluation control board for motor control applications. The kit demonstrates Infineon’s motion control IC technology. Main features of the IMC102T-F064 Motion Control IC are: • MCE (Motion Control Engine) as ready-to-use solution for variable speed drives • Field oriented c

文件：1.90936 Mbytes 页数：41 Pages

Infineon

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Medium Power AF Schottky Diode

Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ IF = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according

文件：122.96 Kbytes 页数：6 Pages

Infineon

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Medium Power AF Schottky Diode

Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ IF = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according

文件：122.96 Kbytes 页数：6 Pages

Infineon

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For high efficiency DC/DC conversion fast switching, protection and clamping applications

Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ IF = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according

文件：122.96 Kbytes 页数：6 Pages

Infineon

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For high efficiency DC/DC conversion fast switching, protection and clamping applications

Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ IF = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according

文件：122.96 Kbytes 页数：6 Pages

Infineon

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Sense2GoL pulse development kit

features ›Capability to detect motion, speed and direction of movement (approaching or retreating) ›Detection range of 18 m for human target at a power consumption

文件：268.65 Kbytes 页数：2 Pages

Infineon

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Single-channel isolated gate driver IC with adjustable DESAT and soft-off

Features • 600 V, 650 V, 900 V, and 1200 V IGBTs, SiC and Si MOSFETs • 40 V absolute maximum output supply voltage • ±3 A, ±6 A, and ±9 A typical sinking and sourcing peak output current • Separate source and sink outputs for hard switching and with active Miller clamp/clamp driver • Adjustme

文件：2.30184 Mbytes 页数：20 Pages

Infineon

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丝印：3N；Package：DFN1006BD-2；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • High reverse voltage

文件：228.46 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：3N；Package：DFN1006BD-2；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • High reverse voltage

文件：228.69 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：5B；Package：TSLP-2-17；Medium Power AF Schottky Diode

文件：856.69 Kbytes 页数：8 Pages

Infineon

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