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BAS116LT1D

SwitchingDiode

Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS116LT1G

SwitchingDiod

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS116LT1G

SwitchingDiode

Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS116LT1G

SwitchingDiode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS116LT1G

SwitchingDiode

Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

LBAS116LT1G

SurfaceMountLowLeakgeDiode

FEATURE ●Ultra-SmallSurfaceMountPackage ●VeryLowLeakageCurrent ●LeadFree/RoHSCompliant(Note2) ●QualifiedtoAEC-Q101StandardsforHighReliability ●Wedeclarethatthematerialofproductcompliance withRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplications

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LBAS116LT1G

SurfaceMountLowLeakgeDiodeUltra-SmallSurfaceMountPackage

FEATURE ●Ultra-SmallSurfaceMountPackage ●VeryLowLeakageCurrent ●LeadFree/RoHSCompliant(Note2) ●QualifiedtoAEC-Q101StandardsforHighReliability ● ●Wedeclarethatthematerialofproductcompliance withRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicati

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

SBAS116LT1G

SwitchingDiode

Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

SBAS116LT1G

SwitchingDiode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

S-LBAS116LT1G

SurfaceMountLowLeakgeDiode

FEATURE ●Ultra-SmallSurfaceMountPackage ●VeryLowLeakageCurrent ●LeadFree/RoHSCompliant(Note2) ●QualifiedtoAEC-Q101StandardsforHighReliability ●Wedeclarethatthematerialofproductcompliance withRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplications

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

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