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BAS116TW

SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODES

VOLTAGE100VoltsPOWER200mWatts FEATURES •Sufacemountpackageideallysuitedforautomaticinsertion. •Verylowleakagecurrent.2nAtypicalatVR=75V. •Lowcapacitance.2pFmaxatVR=0V,f=1MHz •IncompliancewithEURoHS2002/95/ECdirectives MECHANICALDATA •Case:SOT-363plastic

PANJITPan Jit International Inc.

強茂強茂股份有限公司

BAS116UDJ

DUALSURFACEMOUNTSWITCHINGDIODE

Features •Ultra-SmallSurfaceMountPackage(1.0x0.8mm) •Ultra-LowProfilePackage(0.45mm) •UltraLowLeakageCurrent(5nA@VR=75V) •LowCapacitance •IdealforBatteryPoweredPortableApplications •LeadFreeByDesign/RoHSCompliant(Note1) •HalogenandAntimonyFreeGreenDe

DIODESDiodes Incorporated

美台半导体

BAS116V

SURFACEMOUNTLOWLEAKAGEDIODE

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) MechanicalData •Case:SOT563 •CaseMaterial:MoldedPlastic,“Green”Mo

DIODESDiodes Incorporated

美台半导体

BAS116V

SURFACEMOUNTLOWLEAKAGEDIODE

DIODESDiodes Incorporated

美台半导体

BAS116V

SURFACEMOUNTLOWLEAKAGEDIODE

DIODESDiodes Incorporated

美台半导体

BAS116VY

Low-leakagetripleswitchingdiode

1.Generaldescription Epitaxial,medium-speedswitching,electricallyisolatedtriplediodeinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowleakagecurrent:max.5nA •Switchingtime:typical0.8μs •Continuousreversevoltage:maxim

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116VY-Q

Low-leakagetripleswitchingdiode

1.Generaldescription Epitaxial,medium-speedswitching,electricallyisolatedtriplediodeinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowleakagecurrent:max.5nA •Switchingtime:typical0.8μs •Continuousreversevoltage:maxim

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116W

SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODES

SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODES VOLTAGE100VoltsPOWER200mWatts FEATURES •Sufacemountpackageideallysuitedforautomaticinsertion. •Verylowleakagecurrent.2pAtypicalatVR=75V. •Lowcapacitance.2pFmaxatVR=0V,f=1MHz •BothnormalandPbfreeproduct

PANJITPan Jit International Inc.

強茂強茂股份有限公司

BAS116W

SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODES

PANJITPan Jit International Inc.

強茂強茂股份有限公司

BAS116W

0.215A,85VSurfaceMountSmallSignalSwitchingDiode

FEATURES •Lowleakagecurrentapplications. •Mediumspeedswitchingtimes. •SurfacemountpackageideallysuitedforautomaticInsertion. APPLICATINS •Highspeedswitchingapplication.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

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