Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

● PIN diode for high speed switching of RF signals ● Low forward resistance ● Very low capacitance ● For frequencies up to 3 GHz

文件：52.17 Kbytes 页数：4 Pages

SIEMENS

西门子

Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Infineon

英飞凌

Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

● PIN diode for high speed switching of RF signals ● Low forward resistance ● Very low capacitance ● For frequencies up to 3 GHz

文件：52.17 Kbytes 页数：4 Pages

SIEMENS

西门子

丝印：G；Package：SOD-323；Silicon PIN Diodes

● PIN diode for high speed switching of RF signals ● Very low forward resistance (low insertion loss) ● Very low capacitance (high isolation) ● For frequencies up to 3GHz

文件：497.65 Kbytes 页数：9 Pages

INFINEON

英飞凌

丝印：G；Package：SOD-323；Silicon PIN Diodes

文件：180.16 Kbytes 页数：16 Pages

INFINEON

英飞凌

丝印：G；Package：SOD-323；Silicon PIN Diodes

文件：1.05277 Mbytes 页数：16 Pages

INFINEON

英飞凌

丝印：G；Package：SOD-323；Silicon PIN Diodes

文件：1.05277 Mbytes 页数：16 Pages

INFINEON

英飞凌

RF PIN 二极管

This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and very low resistance make it suitable for a diversity of switching applications, simplify design-in and suppor • Low capacitance C = 0.31 pF (typical) at voltage VR = 0 V and frequencies f ≥ 1 GHz\n• Very low forward resistance RF = 1.9 Ω (typical) at forward current IF = 5 mA and frequency f = 100 MHz\n• Charge carrier lifetime τ = 75 ns (typical)\n• Industry standard SOD323 package (2.5 mm x 1.25 mm x 0.9 ;

Infineon

英飞凌