BAR63-03W数据手册Infineon中文资料规格书

描述 Description

This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and very low resistance make it suitable for a diversity of switching applications, simplify design-in and support designers in creating versatile end solutions.

特性 Features

• Low capacitance C = 0.31 pF (typical) at voltage VR = 0 V and frequencies f ≥ 1 GHz
• Very low forward resistance RF = 1.9 Ω (typical) at forward current IF = 5 mA and frequency f = 100 MHz
• Charge carrier lifetime τ = 75 ns (typical)
• Industry standard SOD323 package (2.5 mm x 1.25 mm x 0.9 mm)
• Pb-free, RoHS compliant and halogen-free

优势:

应用 Application

Optimized for low bias current RF and high-speed interface switches in:
• Wireless communications
• High speed data networks