首页 >BAP64-06-TP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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PinDiode PinDiode FEATURE ●Highvoltage,currentcontrolled ●RFresistorforRFattenuatorsandswitches ●Lowdiodecapacitance ●Lowdiodeforwardresistance ●Lowseriesinductance ●Forapplicationsupto3GHz APPLICATION ●RFattenuatorsandswitches | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
SiliconPINdiode DESCRIPTION TwoplanarPINdiodesincommonanodeconfigurationinaSOT323smallSMDplasticpackage. FEATURES •Highvoltage,currentcontrolled •RFresistorforRFattenuatorsandswitches •Lowdiodecapacitance •Lowdiodeforwardresistance •Lowseriesinductance •Forapplications | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
GeneralPurposePinDiodes200mW | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
Lowdiodecapacitance Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Lowdiodecapacitance •Lowdiodeforwardresistance | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
SmallSignalGeneralPurposePiNDiode | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | ||
SmallSignalGeneralPurposePiNDiode | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
SiliconPINDiode SiliconPINDiodes •HighvoltagecurrentcontrolledRFresistorforRFattenuatorandswitches •Frequencyrangeabove1MHzupto3GHz •Lowresistanceandlongcarrierlifetime •Verylowcapacitanceatzerovoltsreversebiasatfrequenciesabove1GHz •Verylowsignaldistortion | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SiliconPINDiode Features ●Highvoltagecurrentcontrolled ●RFresistorforRFattenuatorandswirches ●Freqencyrangeabove1MHz ●Lowresistanceandshortcarrierlifetime ●Forfrequenciesupto3GHz | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
SiliconPINDiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HighvoltagecurrentcontrolledRFresistorforRFattenuatorandswitches SiliconPINDiode •HighvoltagecurrentcontrolledRFresistorforRFattenuatorandswitches •Frequencyrangeabove1MHzupto6GHz •Verylowcapacitanceatzerovoltreversebiasatfrequenciesabove1GHz(typ.0.17pF) •Lowforwardresistance(typ.2.1Ω@10mA) •Verylowsignald | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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