丝印：BAP；Package：SOT-89；PNP General Purpose Amplifier

FEATURES Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-500mA/-50mA). Complementary NPN type available 2SD1664. APPLICATIONS This device is designed as a general purpose amplifier and switching.

文件：506.45 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BAP；Package：SOT-89；PNP Plastic-Encapsulate Transistors

PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM= 0.5W(Tamb=25
) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO= -40V • Operating and st

文件：193.17 Kbytes 页数：2 Pages

MCC

丝印：BAP；Package：SOT-89；PNP Transistor

文件：731.12 Kbytes 页数：3 Pages

PJSEMI

平晶半导体

Enables flexible construction of safety circuits

• Force guided contact mechanism (EN50205 Type A TÜV approved) • Contact configuration 4-pole (2NO-2NC, 3NO-1NC) 6-pole (4NO-2NC, 5NO-1NC, 3NO-3NC) • Built-in LED indicator available. • Fast response time (8 ms maximum). • High shock resistance (200 m/s2 minimum) • Finger-safe DIN rail mou

文件：2.90174 Mbytes 页数：8 Pages

IDEC

和泉电气

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Silicon PIN diode

FEATURES  High voltage, current controlled  RF resistor for RF attenuators and switches  Low diode capacitance  Low diode forward resistance  Very low series inductance  For applications up to 3 GHz. APPLICATIONS  RF attenuators and switches. DESCRIPTION Two planar PIN diodes

文件：217.46 Kbytes 页数：8 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP