丝印：BAP；Package：SOT-89；PNP General Purpose Amplifier

FEATURES Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-500mA/-50mA). Complementary NPN type available 2SD1664. APPLICATIONS This device is designed as a general purpose amplifier and switching.

文件：506.45 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BAP；Package：SOT-89；PNP Plastic-Encapsulate Transistors

PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM= 0.5W(Tamb=25
) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO= -40V • Operating and st

文件：193.17 Kbytes 页数：2 Pages

MCC

丝印：BAP；Package：SOT-23(DBV)；TPS763-Q1 Automotive 150mA, 10V, Low-Dropout Linear Regulator

1 Features • AEC-Q100 Qualified for automotive applications: – Temperature Grade 1: –40°C to +150°C TJ (new chip) – Device HBM ESD Classification: Level 1C – Device CDM ESD Classification: Level C3 (legacy chip) – Device CDM ESD Classification: Level C4 (new chip) • Input voltage range VI

文件：1.46732 Mbytes 页数：42 Pages

TI

德州仪器

丝印：BAP；Package：SOT-23(DBV)；TPS763-Q1 Automotive 150mA, 10V, Low-Dropout Linear Regulator

1 Features • AEC-Q100 Qualified for automotive applications: – Temperature Grade 1: –40°C to +150°C TJ (new chip) – Device HBM ESD Classification: Level 1C – Device CDM ESD Classification: Level C3 (legacy chip) – Device CDM ESD Classification: Level C4 (new chip) • Input voltage range VI

文件：1.46732 Mbytes 页数：42 Pages

TI

德州仪器

丝印：BAP；Package：SOT-23(DBV)；TPS763-Q1 Automotive 150mA, 10V, Low-Dropout Linear Regulator

1 Features • AEC-Q100 Qualified for automotive applications: – Temperature Grade 1: –40°C to +150°C TJ (new chip) – Device HBM ESD Classification: Level 1C – Device CDM ESD Classification: Level C3 (legacy chip) – Device CDM ESD Classification: Level C4 (new chip) • Input voltage range VI

文件：1.46732 Mbytes 页数：42 Pages

TI

德州仪器

丝印：BAP；Package：SOT-23(DBV)；TPS763-Q1 Automotive 150mA, 10V, Low-Dropout Linear Regulator

1 Features • AEC-Q100 Qualified for automotive applications: – Temperature Grade 1: –40°C to +150°C TJ (new chip) – Device HBM ESD Classification: Level 1C – Device CDM ESD Classification: Level C3 (legacy chip) – Device CDM ESD Classification: Level C4 (new chip) • Input voltage range VI

文件：1.46732 Mbytes 页数：42 Pages

TI

德州仪器

丝印：BAP；Package：SOT-89；PNP Transistor

文件：731.12 Kbytes 页数：3 Pages

PJSEMI

平晶半导体

丝印：BAP*；Package：SOT-89；PNP Transistors

文件：1.70196 Mbytes 页数：3 Pages

KEXIN

科信电子

丝印：BAP*；Package：SOT-89；PNP Transistors

文件：798.72 Kbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：BAPA；Package：6LdSOT-23；1.4GHz Current Feedback Amplifiers with Enable

文件：972.65 Kbytes 页数：16 Pages

RENESAS

瑞萨