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BA979S

RFPINDiodes

VishayVishay Siliconix

威世科技威世科技半导体

BA979S

RFPINDiodes-SingleinQuadroMELFSOD-80

VishayVishay Siliconix

威世科技威世科技半导体

BA979S

RFPINDiodes-SingleinQuadroMELFSOD-80

FEATURES •Widefrequencyrange10MHzto1GHz •AEC-Q101qualified •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •CurrentcontrolledHFresistanceinadjustableattenuators

VishayVishay Siliconix

威世科技威世科技半导体

BA979S

RFPINDiodes

FEATURES •Widefrequencyrange10MHzto1GHz •AEC-Q101qualified •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •CurrentcontrolledHFresistanceinadjustableattenuators

VishayVishay Siliconix

威世科技威世科技半导体

BF979

SiliconPNPPlanarRFTransistor

VishayVishay Siliconix

威世科技威世科技半导体

BF979

SiliconPNPPlanarRFTransistor

Applications UHF/VHFuncontrolledprestageswithlownoiseandlowmodulation. Features Highcrossmodulationperformance Highpowergain Lownoise Highreverseattenuation

VishayVishay Siliconix

威世科技威世科技半导体

BF979S

PNPSILICONPLANARTRANSISTOR

BF976SisaPNPsiliconplanartransistorinlow-capacitanceplasticpackagesimilartoTO119(50B3DIN41867). ThetransistorisparticularlysuitableforuseinuncontrolledUHFandVHFinputstagesfeaturinglowcrossmodulation.

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BTS-PC979

GuardsagainstaccidentaldisconnectionofComputers,PDU’s,ServersandmostNetworkDevices.

BURLAND

Burland Technology Solutions

CD979B

0.5WATTCAPABILITYWITHPROPERHEATSINKING

•1N962BTHRU1N986BAVAILABLEINJANHCANDJANKCPERMIL-PRF-19500/117 •ZENERDIODECHIPS •0.5WATTCAPABILITYWITHPROPERHEATSINKING •ALLJUNCTIONSCOMPLETELYPROTECTEDWITHSILICONDIOXIDE •COMPATIBLEWITHALLWIREBONDINGANDDIEATTACHTECHNIQUES,WITHTHEEXCEPTIONOFSOLDERREFLOW

CDI-DIODE

Compensated Deuices Incorporated

CDLL979B

ZENERDIODES

•1N962BUR-1thru1N986BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/117 •ZENERDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

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