无线红外风扇芯片

TZO

唐正

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 20V , 6A , RDS(ON)=20mΩ @VGS=4.5V. RDS(ON)=30mΩ @VGS=2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：56.45 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

文件：478.68 Kbytes 页数：3 Pages

CHENMKO

力勤

82 Series Multipurpose ABS Enclosure

Product ove r v i ew Multi-purpose ABS cases, designed for a broad range of applications. • Universal plastic enclosure with screw fastening • Available in 26 sizes in two colours; white and black • Suitable for measuring instruments, testing, devices, wireless communications devices, med

文件：431.02 Kbytes 页数：2 Pages

CAMDENBOSS