首页 >BA6679>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-ChannelPowerTrench짰MOSFET-30V,-20A,10m廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VoltP-ChannelPowerTrenchMOSFET ThisP-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers,andbatterychargers.TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(O | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VoltP-ChannelPowerTrench짰MOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-ChannelPowerTrench짰MOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-ChannelPowerTrenchMOSFET-30V,-13A,9mOhm GeneralDescription ThisP-ChannelMOSFETisproductedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistance. ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-Channel30V(D-S)MOSFET APPLICATIONS •LoadSwitch •NotebookAdaptorSwitch | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
P-ChannelEnhancementModeMOSFET FEATURES -30V/-15A Rosion)=6-8MQ(Max.)@Vg=-10V Roson=13MQ(Max)@V,,=-4.5V | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-channelEnhancementModePowerMOSFET Features VDS=-30V,ID=-12A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
30VoltP-ChannelPowerTrenchMOSFET ThisP-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers,andbatterychargers.TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(O | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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