UHF mixer diode

DESCRIPTION Planar Schottky barrier diode encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) glass package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. FEATURES • Low forward voltage • Hermetically-sealed leaded glass package • Low diode capacitance. APPLICATIO

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PHI

飞利浦

Schottky Barrier Diodes

Schottky Barrier Diodes

文件：39.23 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)

NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.4 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package

文件：53.43 Kbytes 页数：6 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package • For orientation in reel see package information below • Ea

文件：60.19 Kbytes 页数：6 Pages

Infineon

英飞凌

NPN Silicon RF Transistor

文件：127.17 Kbytes 页数：6 Pages

Infineon

英飞凌