BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs

FEATURES • Input π Filter • Fully Regulated Outputs • Industry Standard Pinouts • 5, 12, 24, 28, and 48 VDC Inputs • Ripple and Noise Less Than 50mVpp • Input/Output Isolation

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Silicon Variable Capacitance Diodes

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西门子

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.5 dB typ. at f = 900 MHz • High gain; PG = 24 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions

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Build in Biasing Circuit MOS FET IC UHF RF Amplifier

• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.5 dB typ. at f = 900 MHz • High gain; PG = 24 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions

文件：111.98 Kbytes 页数：9 Pages

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