Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 610 mV to 940 mV • Total power dissipation: max. 400 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

文件：28 Kbytes 页数：5 Pages

PHI

PHI

Low-voltage stabistor

DESCRIPTION\nLow-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package.FEATURES\n• Low-voltage stabilization\n• Forward voltage range: 610 mV to 940 mV\n• Total power dissipation: max. 400 mW.APPLICATIONS\n• Low-voltage stabilization e.g.\n– Bias stabilizer in class-B outp • Low-voltage stabilization\n• Forward voltage range: 610 mV to 940 mV\n• Total power dissipation: max. 400 mW.;

恩XP

Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

文件：74.4 Kbytes 页数：4 Pages

ROHM

罗姆

Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

文件：74.4 Kbytes 页数：4 Pages

ROHM

罗姆

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch

文件：113.55 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉