High-speed diodes

DESCRIPTION The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • G

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PHI

PHI

SEMICONDUCTORS

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High-speed diodes

DESCRIPTION\nThe BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.FEATURES\n• Hermetically sealed leaded glass SOD27 (DO-35) package\n• High switching speed: max. 4 ns\n• General applicati • Hermetically sealed leaded glass SOD27 (DO-35) package\n• High switching speed: max. 4 ns\n• General application\n• Continuous reverse voltage: 10 V, 30 V, 50 V\n• Repetitive peak reverse voltage: max. 15 V, 40 V, 60 V\n• Repetitive peak forward current: max. 225 mA.;

恩XP

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

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MICRO-ELECTRONICS

PNP Epitaxial Silicon Transistor

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FAIRCHILD

仙童半导体

Thick Film Chip Arrays

Sulphur resistant version available (Tested to ASTM-B809) AEC-Q200 (BCN10, BCN164AB and BCN4D) Concave and convex versions Isolated and bussed versions

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