零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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ComponentsisDesignedtoProvidecosteffective,Highperformancefiberopticcommunicationlinks Description TheHFBR-0400Seriesofcomponentsisdesignedtoprovidecosteffective,highperformancefiberopticcommunicationlinksforinformationsystemsandindustrialapplicationswithlinkdistancesofupto4kilometers.WiththeHFBR-24X6,the125MHzanalogreceiver,dataratesofupt | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
ComponentsisDesignedtoProvidecosteffective,Highperformancefiberopticcommunicationlinks Description TheHFBR-0400Seriesofcomponentsisdesignedtoprovidecosteffective,highperformancefiberopticcommunicationlinksforinformationsystemsandindustrialapplicationswithlinkdistancesofupto4kilometers.WiththeHFBR-24X6,the125MHzanalogreceiver,dataratesofupt | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
Low-Cost,820nmMiniatureLinkFiberOpticComponentswithST,SMA,SC,andFCPorts Features RoHScompliant Low-costtransmittersandreceivers ChoiceofST,SMA,SC,orFCports 820nmwavelengthtechnology Signalratesupto160MBaud Linkdistancesuptoseveralkilometers Compatiblewith50/125μm,62.5/125μm,100/140μm,and200μmPlastic-CladSilica( | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | BOARDCOM | ||
InfraredSensorsLineGuide | HONEYWELL-ACCHoneywell Accelerometers 霍尼韦尔霍尼韦尔国际公司 | HONEYWELL-ACC | ||
InfraredSensorsLineGuide | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
ReflectiveSensor | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ElectricPowerSteering(EPS) Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemp | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=169A?? Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtempe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A?? Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFET Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=5.3m廓,ID=131A) Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=5.3mΩ ID=169A Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFET Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ROHM |
2017+ |
DIP |
25689 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
ROHM |
2016+ |
DIP18 |
6523 |
只做原装正品现货!或订货! |
询价 | ||
ROHM |
95+ |
DIP-18P |
1480 |
询价 | |||
RHOM |
1436+ |
DIP |
30000 |
绝对原装进口现货可开增值税发票 |
询价 | ||
ROHM |
22+ |
SMD |
3200 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | ||
进口原装 |
23+ |
DIP |
2000 |
全新原装现货 |
询价 | ||
ROHM |
23+ |
DIP-18P |
11092 |
询价 | |||
ROHM |
93+ |
DIP-18P |
121 |
原装现货海量库存欢迎咨询 |
询价 | ||
RHOM |
18+ |
DIP |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
ROHM |
22+ |
DIP |
10000 |
原装正品优势现货供应 |
询价 |
相关规格书
更多- BA1405F
- BA14741
- BA15218
- BA15218F-E1
- BA15218F-T1
- BA15532
- BA15532F-E2
- BA1604F
- BA225
- BA226F-E2
- BA277
- BA3121F-E2
- BA3126N
- BA313
- BA328
- BA3304
- BA3308
- BA3310N
- BA3312N
- BA3314F
- BA335
- BA3402
- BA3420AL
- BA3426AS
- BA3430FS
- BA3506
- BA3516
- BA3520F
- BA3528FP
- BA3530
- BA3541
- BA3570F
- BA3574BFS
- BA3812L
- BA3822LS
- BA3830F
- BA3834F
- BA3835F-E2
- BA3837
- BA3838F
- BA3880S
- BA403
- BA4111F
- BA4234L
- BA4402
相关库存
更多- BA1450S
- BA14741F
- BA15218F
- BA15218F-E2
- BA15218N
- BA15532F
- BA1604
- BA178M05FP-E2
- BA226
- BA25BC0FP-E2
- BA3121
- BA3126
- BA3129F
- BA3161
- BA328F-T1
- BA3306
- BA3308F
- BA3311L
- BA3313L
- BA333
- BA338
- BA3416BL
- BA3423S
- BA343
- BA3430S
- BA3506A
- BA3520
- BA3521
- BA3529FP
- BA3530FS-E2
- BA3543
- BA3571FS
- BA3702
- BA3822FS
- BA3824LS
- BA3833F-E2
- BA3835F
- BA3835S
- BA3837F
- BA3870
- BA401
- BA4110
- BA4220
- BA4236L
- BA4403