丝印：BA1；Package：SOT-23；Plastic-Encapsulate Diodes

FEATURES Small surface mounting type Two diode elements are connected in series

文件：1.00215 Mbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：BA1；Package：PG-VSON-4；CoolGaNTM Transistor 100 V G3

Features • Enhancement mode power transistor - normally OFF switch • No reverse recovery charge • Reverse conduction capability • Low gate charge, low output charge • Qualified according to JEDEC for target applications

文件：953.5 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：BA1；Package：PG-TSON-4；CoolGaNTM Transistor 100 V G3

Features • Enhancement mode power transistor - normally OFF switch • No reverse recovery charge • Reverse conduction capability • Low gate charge, low output charge • Qualified according to JEDEC for target applications

文件：974.05 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：BA1；Package：X2SON；TMAG5253 Low-Power Linear Hall Effect Sensor With EN Pin in Ultra-Small Package

1 Features • Industry-leading low power: – Supply voltage, VCC: 1.65 V – 3.6 V – Shutdown current:

文件：1.87934 Mbytes 页数：36 Pages

TI

德州仪器

丝印：BA1；Package：SOT-23；Surface mount switching diode

文件：105.49 Kbytes 页数：3 Pages

BILIN

银河微电

丝印：BA1；Package：SOT-23；Surface Mount Switching Diode

文件：1.14393 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

丝印：BA15BC0W；Package：TO220FP-5；1.0A Low-Dropout Voltage Regulator with Shut down Switch

BA33BCO -> Correct Parnumber : BA33BC0 The BAxxBC0 are low-saturation regulators with an output current of 1.0 A and an output voltage accuracy of ±2. A broad output voltage range is offered, from 1.5V to 10V, and built-in overcurrent protection and thermal shutdown (TSD) circuits prevent damag

文件：372.7 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：BA15N26B；Package：TO-3PL；Complementary NPN-PNP Power Bipolar Transistor R

APPLICATIONS  High fidelity audio amplifier and other linear applications FEATURES High collector voltage：VCEO=260V (min) Complementary NPN-PNP Exceptional Safe Operating Area RoHS Devices

文件：1.1528 Mbytes 页数：5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：BA15N26B；Package：TO-3PB；Complementary NPN-PNP Power Bipolar Transistor R

APPLICATIONS  High fidelity audio amplifier and other linear applications FEATURES High collector voltage：VCEO=260V (min) Complementary NPN-PNP Exceptional Safe Operating Area RoHS Devices

文件：1.1528 Mbytes 页数：5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：BA15P26B；Package：TO-3PL；Complementary NPN-PNP Power Bipolar Transistor R

APPLICATIONS  High fidelity audio amplifier and other linear applications FEATURES High collector voltage：VCEO=260V (min) Complementary NPN-PNP Exceptional Safe Operating Area RoHS Devices

文件：1.1528 Mbytes 页数：5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司