N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on

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STMICROELECTRONICS

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N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

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STMICROELECTRONICS

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N-CHANNEL 900V - 1.1Ohm - 8A - TO-220/FP-D2PAK-TO-247 Zener-Protected SuperMESH MOSFET

STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z Datasheet W9NK90Z datasheet : Search -----> STW9NK90Z The SuperMESH™ series is obtained through an optimization of STMicroelectronics’ well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly lower, it a

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STMICROELECTRONICS

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丝印：B9NK50Z；Package：D2PAK；N-CHANNEL 500V - 7.2A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：371.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

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丝印：B9NK50Z；Package：I2PAK；N-CHANNEL 500V - 7.2A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：371.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

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丝印：B9NK50Z；Package：D2PAK；N-CHANNEL 500V - 0.72ohm - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH??Power MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：572.91 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：B9NK50Z；Package：D2PAK；N-CHANNEL 500V - 7.2A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：371.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：B9NK60Z；Package：D2PAK；N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：581.75 Kbytes 页数：13 Pages

STMICROELECTRONICS

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丝印：B9NK60Z-1；Package：I2PAK；N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：581.75 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：B9NK60Z；Package：D2PAK；N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：581.75 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体