N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on

文件：461.76 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh™II MOSFET

ST

意法半导体

N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on

文件：461.76 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET

The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0

文件：108.73 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET

The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0

文件：108.73 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体