EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING)

AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES • Complementary to KTD882.

文件：297.58 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

PNP Silicon Transistor

Description • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with STD882 • Switching Application

文件：123.89 Kbytes 页数：3 Pages

AUK

PNP EPITAXIAL PLANAR TRANSISTOR

Description The HSB772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature..............................................................................

文件：41.73 Kbytes 页数：4 Pages

HSMC

华昕

PNP Silicon Epitaxial Planar Transistor

FEATURES Low speed switching. Low saturation voltage. Excellent hFE linearity and high hFE. Complementary: D882 APPLICATIONS Audio frequency power amplifier.

文件：324.64 Kbytes 页数：5 Pages

BILIN

银河微电

SOT - 8 9 Plastic-Encapsulate Transistors

DESCRIPTION The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver. FEATURES • Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400

文件：204.34 Kbytes 页数：2 Pages

DAYA

大亚电器

TO-126 Plastic-Encapsulate Transistors

FEATURES Power dissipation PCM: 1.25W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：1.06496 Mbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SOT-89 Plastic-Encapsulate Transistors

文件：353.96 Kbytes 页数：2 Pages

WILLAS

威伦电子

GENERAL PURPOSE TRANSISTORS PNP PLASTIC-ENCAPSULATE TRANSISTORS

DESCRIPTION The B772 is available in SOT 89 p ackage FEATURES  A vailabl e in SOT 89 p ackage

文件：376.41 Kbytes 页数：4 Pages

AITSEMI

创瑞科技

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 1.25 W(Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: - 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：63.69 Kbytes 页数：1 Pages

TEL

SOT-89 Plastic-Encapsulate Transistors

文件：3.53069 Mbytes 页数：2 Pages

TUOFENG

拓锋半导体