IIRFP3710

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FullyAvalancheRated •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤25mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IIRFR3710Z

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤18mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IR3710MTRPBF

WIDEINPUTANDOUTPUT,SYNCHRONOUSBUCKREGULATOR

IR3710MTRPBF

WIDEINPUTANDOUTPUT,SYNCHRONOUSBUCKREGULATOR

IRDC3710-DF

USERGUIDEFORIRDC3710-DFEVALUATIONBOARD

IRDC3710-QFN

USERGUIDEFORIRDC3710-QFNEVALUATIONBOARD

IRF3710

PowerMOSFET(Vdss=100V,Rds(on)=23mohm,Id=57A)

VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF3710

N-ChannelPowerMOSFET

IRF3710

AdvancedProcessTechnology

IRF3710

N-ChannelPowerMOSFET(100V/59A)