首页 >B360M>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS | DSK Diode Semiconductor Korea | DSK | ||
3.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features GuardRingDieConstructionforTransientProtection IdeallySuitedforAutomatedAssembly LowPowerLoss,HighEfficiency ForUseinLow-Voltage,High-FrequencyInverters,FreeWheeling,andPolarityProtectionApplication Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandA | DIODES Diodes Incorporated | DIODES | ||
3ASurfaceMountSchottkyBarrierRectifiers | CITCChip Integration Technology Corporation 竹懋科技竹懋科技股份有限公司 | CITC | ||
3ASurfaceMountSchottkyBarrierRectifiers | CITCChip Integration Technology Corporation 竹懋科技竹懋科技股份有限公司 | CITC | ||
3ASurfaceMountSchottkyBarrierRectifiers | CITCChip Integration Technology Corporation 竹懋科技竹懋科技股份有限公司 | CITC | ||
THROUGHHOLESCHOTTKYBARRIERRECTIFIERS | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
THROUGHHOLESCHOTTKYBARRIERRECTIFIERS | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
THROUGHHOLESCHOTTKYBARRIERRECTIFIERS | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
THROUGHHOLESCHOTTKYBARRIERRECTIFIERS | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor Preliminarydata •Lowvoltage/lowcurrentoperation •Forlownoiseamplifiers •ForOscillatorsupto3.5GHzandPout>10dBm •Lownoisefigure:1.0dBat1.8GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
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