丝印：B3XXAE；Package：SMA；3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony F

文件：407.41 Kbytes 页数：5 Pages

DIODES

美台半导体

Surface Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.

文件：102.52 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

Surface Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.

文件：102.52 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

Surface Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.

文件：102.52 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

Surface Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.

文件：102.52 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony F

文件：405.05 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B3XXAF；Package：SMAF；3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony F

文件：405.05 Kbytes 页数：5 Pages

DIODES

美台半导体

3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features  Guard Ring Die Construction for Transient Protection  Low Leakage at High Temperature  Low Power Loss, High Efficiency  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Notes 3)  Qualified to AEC-Q101 Standards for High Reliability

文件：449.98 Kbytes 页数：5 Pages

DIODES

美台半导体

Surface-Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.visha

文件：91.37 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

Surface Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficifieency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to

文件：82.89 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世