丝印：B3；Package：SC-79；Low capacitance bidirectional ESD protection diode

1. General description Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a ultra-small and flat lead SOD523 plastic package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits • Bidirectional ESD prot

文件：197.26 Kbytes 页数：10 Pages

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丝印：B3；Package：SOD128；600 W Transient Voltage Suppressor

1.1 General description 600 W unidirectional Transient Voltage Suppressor (TVS) in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. 1.2 Features and benefits 1.3 Applications Power supply protection Automotive applic

文件：682.46 Kbytes 页数：12 Pages

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丝印：B3；Package：SOD128；600 W Transient Voltage Suppressor

1. General description 600 W unidirectional Transient Voltage Suppressor (TVS) in a SOD128 small and flat lead Surface- Mounted Device (SMD) plastic package, designed for transient overvoltage protection. 2. Features and benefits • Rated peak pulse power: PPPM = 600 W • Reverse standoff volta

文件：223.49 Kbytes 页数：11 Pages

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丝印：B3；Package：SOD123W；400 W Transient Voltage Suppressor

1.1 General description 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. 1.2 Features and benefits 1.3 Applications Power supply protection Auto

文件：680.8 Kbytes 页数：12 Pages

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丝印：B3；Package：SOD123W；400 W Transient Voltage Suppressor

1. General description 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. 2. Features and benefits • Rated peak pulse power: PPPM = 400 W (350 W for 3V3) • Reve

文件：220.4 Kbytes 页数：11 Pages

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丝印：B3；Package：SC-88；PNP/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：919.36 Kbytes 页数：15 Pages

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丝印：B3；Package：SC-88；NPN/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

Features * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：83.68 Kbytes 页数：11 Pages

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丝印：B3；Package：TSSOP6；50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = open

1. General description NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH30 PNP/PNP complement: PUMB30 2. Features and benefits • 100 mA output current capability • Built-in bias resistor

文件：239.49 Kbytes 页数：11 Pages

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丝印：B3；Package：X2SON；TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1 Features • Typical accuracy: 0.5 • Supports 200-mA output • Low IQ: 25 μA • Fixed-output voltage combinations possible from 0.85 V to 5.0 V(1) • High PSRR: – 70 dB at 100 Hz – 50 dB at 1 MHz • Stable with effective capacitance of 0.1 μF(2) • Thermal shutdown and overcurrent protection

文件：1.46906 Mbytes 页数：44 Pages

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丝印：B3；Package：X2SON；TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1 Features • Typical accuracy: 0.5 • Supports 200-mA output • Low IQ: 25 μA • Fixed-output voltage combinations possible from 0.85 V to 5.0 V(1) • High PSRR: – 70 dB at 100 Hz – 50 dB at 1 MHz • Stable with effective capacitance of 0.1 μF(2) • Thermal shutdown and overcurrent protection

文件：1.47199 Mbytes 页数：44 Pages

TI

德州仪器