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B260S1F-7

丝印:B26;Package:SOD123F;2.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony F

文件:417.02 Kbytes 页数:5 Pages

DIODES

美台半导体

BF570

丝印:B26;Package:SOT23;NPN medium frequency transistor

FEATURES •Low current (max. 100 mA) •Low voltage (max. 15 V) •Low feedback capacitance (max. 2.2 pF).

文件:299.31 Kbytes 页数:7 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

INA326EASLASH250

丝印:B26;Package:VSSOP;Precision, Rail-to-Rail I/O INSTRUMENTATION AMPLIFIER

FEATURES PRECISION LOW OFFSET: 100μV (max) LOW OFFSET DRIFT: 0.4μV/°C (max) EXCELLENT LONG-TERM STABILITY VERY-LOW 1/f NOISE TRUE RAIL-TO-RAIL I/O INPUT COMMON-MODE RANGE: 20mV Below Negative Rail to 100mV Above Positive Rail WIDE OUTPUT SWING: Within 10mV of Rails SUPPLY RANGE: Single

文件:885.99 Kbytes 页数:28 Pages

TI

德州仪器

INA326EASLASH250.B

丝印:B26;Package:VSSOP;Precision, Rail-to-Rail I/O INSTRUMENTATION AMPLIFIER

FEATURES PRECISION LOW OFFSET: 100μV (max) LOW OFFSET DRIFT: 0.4μV/°C (max) EXCELLENT LONG-TERM STABILITY VERY-LOW 1/f NOISE TRUE RAIL-TO-RAIL I/O INPUT COMMON-MODE RANGE: 20mV Below Negative Rail to 100mV Above Positive Rail WIDE OUTPUT SWING: Within 10mV of Rails SUPPLY RANGE: Single

文件:885.99 Kbytes 页数:28 Pages

TI

德州仪器

INA326EASLASH250G4

丝印:B26;Package:VSSOP;Precision, Rail-to-Rail I/O INSTRUMENTATION AMPLIFIER

FEATURES PRECISION LOW OFFSET: 100μV (max) LOW OFFSET DRIFT: 0.4μV/°C (max) EXCELLENT LONG-TERM STABILITY VERY-LOW 1/f NOISE TRUE RAIL-TO-RAIL I/O INPUT COMMON-MODE RANGE: 20mV Below Negative Rail to 100mV Above Positive Rail WIDE OUTPUT SWING: Within 10mV of Rails SUPPLY RANGE: Single

文件:885.99 Kbytes 页数:28 Pages

TI

德州仪器

INA326EASLASH250G4.B

丝印:B26;Package:VSSOP;Precision, Rail-to-Rail I/O INSTRUMENTATION AMPLIFIER

FEATURES PRECISION LOW OFFSET: 100μV (max) LOW OFFSET DRIFT: 0.4μV/°C (max) EXCELLENT LONG-TERM STABILITY VERY-LOW 1/f NOISE TRUE RAIL-TO-RAIL I/O INPUT COMMON-MODE RANGE: 20mV Below Negative Rail to 100mV Above Positive Rail WIDE OUTPUT SWING: Within 10mV of Rails SUPPLY RANGE: Single

文件:885.99 Kbytes 页数:28 Pages

TI

德州仪器

INA326EASLASH2K5

丝印:B26;Package:VSSOP;Precision, Rail-to-Rail I/O INSTRUMENTATION AMPLIFIER

FEATURES PRECISION LOW OFFSET: 100μV (max) LOW OFFSET DRIFT: 0.4μV/°C (max) EXCELLENT LONG-TERM STABILITY VERY-LOW 1/f NOISE TRUE RAIL-TO-RAIL I/O INPUT COMMON-MODE RANGE: 20mV Below Negative Rail to 100mV Above Positive Rail WIDE OUTPUT SWING: Within 10mV of Rails SUPPLY RANGE: Single

文件:885.99 Kbytes 页数:28 Pages

TI

德州仪器

INA326EASLASH2K5.B

丝印:B26;Package:VSSOP;Precision, Rail-to-Rail I/O INSTRUMENTATION AMPLIFIER

FEATURES PRECISION LOW OFFSET: 100μV (max) LOW OFFSET DRIFT: 0.4μV/°C (max) EXCELLENT LONG-TERM STABILITY VERY-LOW 1/f NOISE TRUE RAIL-TO-RAIL I/O INPUT COMMON-MODE RANGE: 20mV Below Negative Rail to 100mV Above Positive Rail WIDE OUTPUT SWING: Within 10mV of Rails SUPPLY RANGE: Single

文件:885.99 Kbytes 页数:28 Pages

TI

德州仪器

74AHCT1G126DBVRE4

丝印:B26G;Package:SOT-23;SN74AHCT1G126 Single Bus Buffer Gate With 3-State Output

1 Features • Operating range of 4.5V to 5.5V • Max tpd of 6ns at 5V • Low power consumption, 10μA max ICC • ±8mA output drive at 5V • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250mA per JESD 17 2 Applications • Motor Controls: AC Induction • Graphics Cards • Adv

文件:1.05864 Mbytes 页数:24 Pages

TI

德州仪器

74AHCT1G126DBVRG4

丝印:B26G;Package:SOT-23;SN74AHCT1G126 Single Bus Buffer Gate With 3-State Output

1 Features • Operating range of 4.5V to 5.5V • Max tpd of 6ns at 5V • Low power consumption, 10μA max ICC • ±8mA output drive at 5V • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250mA per JESD 17 2 Applications • Motor Controls: AC Induction • Graphics Cards • Adv

文件:1.05864 Mbytes 页数:24 Pages

TI

德州仪器

详细参数

  • 型号:

    B26

  • 功能描述:

    两极晶体管 - BJT TRANS MED FREQ TAPE-7

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
NEXPERIA/安世
25+
SOT-23
20300
NEXPERIA/安世原装特价BF570即刻询购立享优惠#长期有货
询价
恩XP
2019+
SOT-23
36000
原盒原包装 可BOM配套
询价
NEXPERIA/安世
20+
SOT-23
120000
原装正品 可含税交易
询价
恩XP
1717+
NA
9000
询价
恩XP
1717+
NA
9000
询价
PHI
23+
原厂封装
12300
询价
恩XP
24+
SOT-23
14580
新进库存/原装
询价
PHI
25+
SOT23-3
4000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
Nexperia
24+
NA
3000
进口原装正品优势供应
询价
恩XP
23+
SOT23
8560
受权代理!全新原装现货特价热卖!
询价
更多B26供应商 更新时间2025-9-21 14:14:00