B250Q-13

2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomatedAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto50APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplication •H

B250Q-13

2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomatedAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto50APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplication •H

B250Q-13

2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomatedAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto50APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplication •H

B250Q-13

2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomatedAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto50APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplication •H

B250R

Silicon-Bridge Rectifiers

Nominalcurrent–5A/3.3A Alternatinginputvoltage40…500V Plasticcase32x5.6x17[mm] Weightapprox.–9g PlasticmaterialhasULclassification94V-0

B250S

Surface Mount Si-Bridge Rectifiers

Features ULrecognized,FileE175067SlimProfile2.5mmComplianttoRoHS,REACH,ConflictMinerals1) TypicalApplications 50/60HzMainsRectification,PowerSuppliesCommercialgrade1) MechanicalData1) Tapedandreeled1500/13“ Weightapprox.0.4g Casematerial

B250S

Surface Mount Si-Bridge Rectifiers

ForwardCurrent:1,0A ReverseVoltage:80to1000V Features •max.soldertemperature260°C •ULrecognized,fileno.E63532 •Standardpackingtapedandreeled

B250S

GLASS PASSIVATED SILICON BRIDGE RECTIFIERS

VOLTAGERANGE:80--1000VCURRENT:0.8A FEATURES ◇Ratingto1000V ◇Lowforwardvoltagedrop ◇Smallsize,plasticcase ◇Glasspassivatedjunction ◇Weight:0.016ounces,0.45grams ◇Mountingposition:Any

B250S

Glass Passivated Silicon Bridge Rectifiers

VOLTAGERANGE:80--1000VCURRENT:0.8A Features ◇Ratingto1000V ◇Lowforwardvoltagedrop ◇Smallsize,plasticcase ◇Glasspassivatedjunction ◇Weight:0.016ounces,0.45grams ◇Mountingposition:Any

B25-28

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheB25-28isDesignedforVHFClassCPowerAmplifierApplicationsupto250MHz. FEATURES: •PG=10dBTypicalat25W/175MHz •∞LoadVSWRatRatedConditions •Omnigold™MetallizationSystem