首页 >B230HHNAV>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
High-CurrentDensitySurfaceMountSchottkyRectifier FEATURES •Lowprofilepackage •Idealforautomatedplacement •Guardringforovervoltageprotection •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •Highsurgecapability •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •ComplianttoRoHSDirective2002/95/E | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-CurrentDensitySurfaceMountSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-CurrentDensitySurfaceMountSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighCurrentDensitySurfaceMountSchottkyRectifier FEATURES •Lowprofilepackage •Idealforautomatedplacement •Guardringforovervoltageprotection •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •Highsurgecapability •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Materialcategorization:Fordefiniti | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighCurrentDensitySurface-MountSchottkyRectifier FEATURES •Lowprofilepackage •Idealforautomatedplacement •Guardringforovervoltageprotection •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •Highsurgecapability •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinit | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
LOVFSURFACEMOUNTSCHOTTKYBARRIERRECTIFIER | PACELEADERPACELEADER INDUSTRIAL 霈峰霈峰实业有限公司 | PACELEADER | ||
SurfaceMountSchottkyBarrierDiodes Features: *PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0UtilizingFlame RetardantEpoxyMoldingCompound. *Forsurfacemountedapplications. *ExceedsenvironmentalstandardsofML-S-19500/228 *Lowleakagecurrent | WEITRON Weitron Technology | WEITRON | ||
2.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER DescriptionandApplications ThisSchottkyBarrierRectifierisdesignedtomeetthegeneralrequirementsofcommercialapplications.Itisideallysuitedforuseas: •PolarityProtectionDiode •Re-CirculatingDiode •SwitchingDiode •BlockingDiode •FreewheelDiode FeaturesandBenefit | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-126package •ComplementtotypeBD231 •Highcurrent(Max:1.5A) •Lowvoltage(Max:80V) APPLICATIONS •DrivestageinTVcircuits | SAVANTIC Savantic, Inc. | SAVANTIC | ||
iscSiliconNPNPowerTransistor DESCRIPTION •DCCurrentGain- :hFE=40(Min)@IC=0.15A •ComplementtoTypeBD227/229/231 APPLICATIONS •Designedforuseindriverstagesintelevisioncircuits. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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