丝印：B20；Package：SOT23-3L；Precision micropower shunt voltage reference

Features • Fixed 2.048 V, 2.5 V, 3.0 V, 4.096 V and 5.0 V output voltages • Ultra low operating current: 10 μA at 25 °C • High precision @ 25 °C: +/- 0.1% (LM4040A), +/- 0.2% (LM4040B), +/- 0.5 % (LM4040C), +/- 1% (LM4040D) • Very low LF noise: typ.10 μ Vp-p • Stable when used

文件：1.10753 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：B20N03；Package：SOP-8；MOSFET

Features - Single drive requirement. - Low on-resistance. - Fast switching characteristic. - Dynamic dv/dt rating. - Repetitive avalanche rated.

文件：531.87 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：B20100；Package：TO-220；SWITCHMODE Schottky Power Rectifier

The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. Features • Package Designed for Power Surface Mount Applications • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 1

文件：79.21 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

丝印：B20NK50Z；Package：I2SPAK；N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：383.12 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：B20NK50Z；Package：D2PAK；N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：383.12 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：B20NM60；Package：I2PAK；N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple

文件：355.14 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：B20NM60；Package：D2PAK；N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple

文件：355.14 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：B20150PR；Package：TO-220F-3L；Dual Common Anode Schottky Rectifier

文件：208.87 Kbytes 页数：5 Pages

KODENSHI

可天士

丝印：B20NK50Z；Package：ISPAK；N-channel 500 V, 0.23 廓, 17 A SuperMESH??Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK

文件：613.26 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：B20NK50Z；Package：DPAK；N-channel 500 V, 0.23 廓, 17 A SuperMESH??Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK

文件：613.26 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体