丝印：B1XXAF；Package：SMAF；1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：419.05 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B1XXAF；Package：SMAF；1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：419.05 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B1XXAF；Package：SMAF；1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：419.05 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B1XXAE；Package：SMA；1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：438.56 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：B1XXAF；Package：SMAF；1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：415 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B1XXAE；Package：SMB；1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：438.56 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：B1XXAE；Package：SMA；1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：438.56 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：B1XXAF；Package：SMAF；1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：415 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B1XXAE；Package：SMB；1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：438.56 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：B1XX；Package：DFN8；500 – 1500 MHz High Linearity LNA

Device Features • Internally matched to 50 ohms • Operated at 3.0V and 5.0V • 37.5 dBm Output IP3 at 0dBm/tone at 700MHz • 22.5dB Gain at 700MHz • 21.1dBm P1dB at 700 MHz • 0.43 dB NF at 700MHz on evaluation board • Green/RoHS2 Compliant DFN8 2x2 Package Product Description BeRex’s BLB0

文件：1.15182 Mbytes 页数：17 Pages

BEREX