1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Ideally Suited for Automated Assembly • Low Power Loss, High Efficiency • Surge Overload Rating to 40A Peak • For Use in Low Voltage, High Frequency Inverters, Free    Wheeling, and Polarity Protection Application • High Temp

文件：101.73 Kbytes 页数：4 Pages

DIODES

美台半导体

Surface-Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definit

文件：116.31 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Power Transistor (??00V,??A)

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.

文件：130.93 Kbytes 页数：3 Pages

ROHM

罗姆

Mobile Load Coil Antenna

PREMIUM MOBILE LOAD COIL ANTENNAS ARE INDUSTRY STANDARD Lairds ongoing commitment to refinement in mechanical and electrical design has resulted in the most technically advanced mobile load coil antennas on the market. Exclusive features such as stainless steel whips, housings constructed with AB

文件：869.76 Kbytes 页数：2 Pages

LSTD

莱尔德

Power Transistor (120V, -6A)

Medium Power Transistor +/-120V/ +/- 6A

文件：38.74 Kbytes 页数：1 Pages

ROHM

罗姆

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -3V, IC= -2A) • Complement to Type 2SD1889 APPLICATIONS • Designed for power amplifier applications.

文件：100.11 Kbytes 页数：2 Pages

ISC

无锡固电

Transistor PNP (low collector saturation voltage wide safe operation area)

Features • available in HRT package • low collector saturation voltage, typically VCE(sat) = -0.5 V at IC/IB = -2 A/-0.2 A • wide safe operation area (SOA) Applications • power amplifier

文件：403.33 Kbytes 页数：5 Pages

ROHM

罗姆

TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. • Collector Power Dissipation : PC=25W (Tc=25ᴱ) • Complementary to KTD2058.

文件：295.64 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

LOW FREQUENCY POWER AMPLIFIER

LOW FREQUENCY POWER AMPLIFIER • Complement to KSD2012

文件：50.08 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Power Transistor(-60V, -3A)

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：42.73 Kbytes 页数：1 Pages

ROHM

罗姆