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B130-M3

Surface-Mount Schottky Barrier Rectifier

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Guardringforovervoltageprotection •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •Highsurgecapability •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinit

VishayVishay Siliconix

威世科技威世科技半导体

B1316

Power Transistor (??00V,??A)

Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-inresistorbetweenbaseandemitter. 3)Built-indamperdiode. 4)Complementsthe2SD2195/2SD1980.

ROHMRohm

罗姆罗姆半导体集团

B132S

Mobile Load Coil Antenna

PREMIUMMOBILELOADCOILANTENNASAREINDUSTRYSTANDARD Lairdsongoingcommitmenttorefinementinmechanicalandelectricaldesignhasresultedinthemosttechnicallyadvancedmobileloadcoilantennasonthemarket.Exclusivefeaturessuchasstainlesssteelwhips,housingsconstructedwithAB

LSTD

Laird Tech Smart Technology

B1340

isc Silicon PNP Darlington Power Transistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) •HighDCCurrentGain-:hFE=2000(Min)@(VCE=-3V,IC=-2A) •ComplementtoType2SD1889 APPLICATIONS •Designedforpoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

B1340

Power Transistor (120V, -6A)

MediumPowerTransistor+/-120V/+/-6A

ROHMRohm

罗姆罗姆半导体集团

B1357

Transistor PNP (low collector saturation voltage wide safe operation area)

Features •availableinHRTpackage •lowcollectorsaturationvoltage,typicallyVCE(sat)=-0.5VatIC/IB=-2A/-0.2A •widesafeoperationarea(SOA) Applications •poweramplifier

ROHMRohm

罗姆罗姆半导体集团

B1366

LOW FREQUENCY POWER AMPLIFIER

LOWFREQUENCYPOWERAMPLIFIER •ComplementtoKSD2012

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

B1366

TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

GENERALPURPOSEAPPLICATION. FEATURES •LowCollectorSaturationVoltage :VCE(sat)=-1.0V(Max.)atIC=-2A,IB=-0.2A. •CollectorPowerDissipation :PC=25W(Tc=25ᴱ) •ComplementarytoKTD2058.

KECKEC CORPORATION

KEC株式会社

B1370

Power Transistor(-60V, -3A)

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm

罗姆罗姆半导体集团

B1383

isc Silicon PNP Darlington Power Transistor

DESCRIPTION •HighDCCurrentGain :hFE=2000(Min.)@IC=-12A,VCE=-4V •HighCollector-EmitterBreakdownVoltage- :V(BR)CEO=-120V(Min) •ComplementtoType2SD2083 APPLICATIONS •Designedfordriverofsolenoid,motorandgeneral purposeapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    B13

  • 制造商:

    Hubbell Wiring Device-Kellems

  • 功能描述:

    WALLPLATE 1-G, BLANK, BRS

供应商型号品牌批号封装库存备注价格
ON/安森美
23+
SMB
15000
全新原装现货,价格优势
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NULL
2447
SSOP8
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
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MOT
24+
DO214B
2600
原装现货假一赔十
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ON/安森美
23+
9
6500
专注配单,只做原装进口现货
询价
ON/安森美
23+
9
6500
专注配单,只做原装进口现货
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CYPRESS
10+
SOP20
7800
全新原装正品,现货销售
询价
24+
TSSOP20
3200
绝对原装自家现货!真实库存!欢迎来电!
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DIODES
09+
DO-214AC
90000
绝对全新原装强调只做全新原装现
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HIT
23+
TO-220
6200
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
DIODES
2020+
SOD123
263
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多B13供应商 更新时间2025-7-17 17:22:00