丝印：L4；Package：SOD-123S；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

文件：90.96 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：L4；Package：SOD-123S；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

文件：90.96 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：L2；Package：SOD-123ST；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

文件：91.99 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：L4；Package：SOD-123ST；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

文件：91.99 Kbytes 页数：3 Pages

CITC

竹懋科技

Surface-Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definit

文件：116.31 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definit

文件：116.31 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

12.0GHz Surface Mount Bandpass Filter

DESCRIPTION DLI’s surface mount catalog bandpass filters utilize DLI’s low loss temperature stable materials which offer small size and minimal performance variation over temperature. The catalog BPF’s are offered in a variety of frequency bands, which offers a drop in solution with highly

文件：1.23748 Mbytes 页数：5 Pages

JOHANSONMANUFACTURING

楼氏集团

12.0GHz Surface Mount Bandpass Filter

DESCRIPTION DLI’s surface mount catalog bandpass filters utilize DLI’s low loss temperature stable materials which offer small size and minimal performance variation over temperature. The catalog BPF’s are offered in a variety of frequency bands, which offers a drop in solution with highly

文件：1.23748 Mbytes 页数：5 Pages

JOHANSONMANUFACTURING

楼氏集团

Surface Mount Schottky Barrier Diodes

Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current * High Current Capability * Plastic Material Has UL Flammability Classification 94V-0 * For Use in, High Frequency Inverters, Free Wheeling, and Polarity Pro

文件：139.24 Kbytes 页数：3 Pages

WEITRON

N-channel 100V - 0.009OHM - 110A - TO-247 - TO-220 - D2PAK STripFET2 Power MOSFET

Description These devices are N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom

文件：376.56 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体