丝印：B1116；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES High Collector Power Dissipation Complementary to 2SD1616/2SD1616A

文件：1.76368 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：B1116A；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES High Collector Power Dissipation Complementary to 2SD1616/2SD1616A

文件：1.76368 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：B1116A；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES High Collector Power Dissipation Complementary to 2SD1616/2SD1616A

文件：1.76368 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：B1116；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES High Collector Power Dissipation Complementary to 2SD1616/2SD1616A

文件：1.76368 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：B113ZS；Package：SPT/SC-72；Digital transistors (built-in resistors)

Feature 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin film resistors with complete isolation to allow positive biasing of the input. Th

文件：66.93 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：B1151；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation Complement to KSD1691

文件：1.65427 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：B1151；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation Complement to KSD1691

文件：1.65427 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：B11NM80；Package：D2PAK；N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247

Features ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates th

文件：908.99 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：B1143；Package：TO-126ML；50V/4A Switching Applications

文件：422.97 Kbytes 页数：7 Pages

SANYO

三洋

丝印：B1143；Package：TO-126ML；50V/4A Switching Applications

文件：422.97 Kbytes 页数：7 Pages

SANYO

三洋