CEM3301

P-ChannelMOSFETusesadvancedtrenchtechnology

CEM3301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-7.0A,RDS(ON)=32mW@VGS=-10V. RDS(ON)=50mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CEU3301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-28A,RDS(ON)=32mΩ@VGS=-10V. RDS(ON)=50mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU3301

P-ChannelEnhancementModeFieldEffectTransistor

CEU3301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-28A,RDS(ON)=32mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=50mW@VGS=-4.5V. Leadfreeproductisacquired.

CHM3301JPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT7.0Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi

CHM3301PAPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT28Ampere FEATURE *Smallflatpackage.(TO-252A) *SuperhighdensitycelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CQ-3301

High-SpeedResponseCorelessCurrentSensor

CS3301

Low-noise,ProgrammableGain,DifferentialAmplifier

Description TheCS3301isalow-noisedifferentialinput,differentialoutputamplifierwithprogrammablegain,optimizedforamplifyingsignalsfromlow-impedancesensorssuchasgeophones.Thegainsettingsarebinaryweighted(x1,x2,x4,x8,x16,x32,x64)andareselectedusingsimplepinse

CS3301

Low-noise,ProgrammableGain,DifferentialAmplifier