| 零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •12.8VOLTNOMINALZENERVOLTAGE±5 •LOWNOISE •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION | CDI-DIODE Compensated Deuices Incorporated | CDI-DIODE | ||
TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •12.8VOLTNOMINALZENERVOLTAGE±5 •LOWNOISE •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION | CDI-DIODE Compensated Deuices Incorporated | CDI-DIODE | ||
OperatingTemperatureRange | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
DualN&P-ChannelPowerTrench짰MOSFETN-Channel:40V,6.1A,26m廓P-Channel:-40V,-5.2A,39m廓 GeneralDescription ThesedualN-andP-ChannelMOSFETsareproducedusingFairchildSemiconductorsadvancedPowerTrench®processthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features Q1:N-Channel ■MaxrDS(on)=26m | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-andP-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
DualN&P-ChannelPowerTrenchMOSFET GeneralDescription ThesedualN-andP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features • | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
1.1WattAudioPowerAmplifierwithFade-InandFade-Out | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
1.1WattAudioPowerAmplifierwithFade-InandFade-Out | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
PowerMOSFET30V,171A,SingleN?묬hannel,SO??FL | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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