NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AVD090P is Designed for High Peak power & low duty cycle, IFF, DME, and TACAN Applications. FEATURES: • Internal Input Matching Network • PG = 8.4 dB at 90 W/1150 MHz • Omnigold™ Metalization System

文件：15.63 Kbytes 页数：1 Pages

ASI

100 - 120 Watts

SPECIAL FEATURES  2:1 wide input range  Optimised for high density, small space applications  Low ripple and noise  Fixed switching frequency  High efficiency  High capacitive load capability  Pre-bias start-up capability  Basic insulation system  Through-hole or SMT termination

文件：508.92 Kbytes 页数：5 Pages

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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AVD10 is Designed for FEATURES: • Input Matching Network • Omnigold™ Metalization System

文件：18.23 Kbytes 页数：1 Pages

ASI

200 Watt 16TH Brick DC-DC Converter

SPECIAL FEATURES  Delivering up to 17A output  Ultra-high peak efficiency 93.9  Wide input range: 36 V ~ 75 V  Fully regulated output voltage  Excellent thermal performance  No minimum load requirement  Basic isolation  Remote control function  Input under voltage lockout  Outp

文件：580.09 Kbytes 页数：5 Pages

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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AVD250 is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES: • Internal Input/Output Matching Networks • PG = 6.2 dB at 250 W/1150 MHz • Omnigold™ Metalization System

文件：17.73 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AVD350 is high power Class C transistor, designed for avionics applications in 960-1215 MHz FEATURES: • Internal Input/Output Matching Networks • PG = 7.0 dB at 350 W/1150 MHz • Omnigold™ Metalization System • 3:1 Load VSWR Capability

文件：17.7 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AVD400is a silicon NPN power transistor, designed for high power and low duty cycle DME and IFF applications. FEATURES: • Internal Input/Output Matching Networks • PG= 6.5 dB at 400 W/1150 MHz • Omnigold™ Metalization System

文件：17.85 Kbytes 页数：1 Pages

ASI

50 Watts

SPECIAL FEATURES  2:1 wide input range  Optimised for high density, small space applications  Low ripple and noise  Fixed switching frequency  High efficiency  High capacitive load capability  Pre-bias start-up capability  Basic insulation system  Through-hole or SMT termination

文件：334.41 Kbytes 页数：4 Pages

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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AVD550 is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES: • Internal Input/Output Matching Networks • PG = 5.6 dB at 550 W/1150 MHz • Omnigold™ Metalization System

文件：17.87 Kbytes 页数：1 Pages

ASI

75 Watts

SPECIAL FEATURES  2:1 Wide input range  Optimised for high density, small space applications  Low ripple and noise  Fixed switching frequency  High efficiency  High capacitive load capability  Pre-bias start-up capability  Basic insulation system  Through hole or SMT termination

文件：312.28 Kbytes 页数：4 Pages

ADVANCEDENERGY

先进能源工业