Low Impedance, up to 5000 hours

文件：209 Kbytes 页数：2 Pages

ILLINOISCAPACITOR

丝印：AVD；Package：TSOT23-8；1 A, 6 V, 1.5 MHz, Low IQ, COT Synchronous Step-Down Converter in 8-pin TSOT23

文件：444.51 Kbytes 页数：15 Pages

MPS

美国芯源

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AVD0.5S is Designed for Class A, DME/TACAN Applications up to 1150 MHz. FEATURES: • Class A Operation • PG = 10 dB at 0.5 W/1150 MHz • Omnigold™ Metalization System

文件：14.23 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AVD002F is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES: • Internal Input Matching Network • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold™ Metalization System

文件：17.08 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AVD002P is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES: • Class C Operation • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold™ Metalization System

文件：15.75 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AVD004F is Designed for FEATURES: • Omnigold™ Metalization System

文件：17.05 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AVD004P is Designed for FEATURES: • Omnigold™ Metalization System

文件：15.69 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AVD004F is Designed for FEATURES: • Omnigold™ Metalization System

文件：17.05 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AVD004P is Designed for FEATURES: • Omnigold™ Metalization System

文件：15.69 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AVD015F is Designed for Class C, DME/TACAN Applications up to 1150 MHz . FEATURES: • Class C Operation • PG = 10 dB at 15 W/1150 MHz • Omnigold™ Metalization System

文件：17.06 Kbytes 页数：1 Pages

ASI