SGT MOSFET

SGT MOSFET , 安海半导体为客户提供了丰富的低压MOSFET产品，采用先进的 SGT MOS技术，极低的 FOM[RDS(on)xQg] 实现了低的导通和开关损耗，便于客户提高产品效率，做到更高的功率密度。优秀的EAS和SOA参数便于客户产 品适应不同的负载应用。-40°C-150°C的工作结温，便于客户产品在不同工作环境温度的应用。

ANHI

安海半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT040N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.05967 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT040N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：938.07 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

MOSFET ??Power, Dual N-Channel 100 V, 39 m, 21 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWD040N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free, Berylliu

文件：218.66 Kbytes 页数：7 Pages

ONSEMI

安森美半导体